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SI7615ADN-T1-GE3

Part No SI7615ADN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 35A 1212-8S
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 183nC @ 10V
Max Input Capacitance 5590pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 4.4 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 121701-SI7615ADN-T1-GE3
Family Name Si7615ADN
Introduction Date July 17, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7615ADN-T1-GE3 CAD Model

Description

The Si7615ADN is a P-channel MOSFET from Vishay with a popularity of high demand in the market.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 35A @ 25°C
  • Maximum Rds On at Id, Vgs: 4.4 mOhm @ 20A, 10V
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 183nC @ 10V
  • Package: PowerPAK 1212-8
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5370 $51.0150
200+ $0.5030 $100.6000
310+ $0.4860 $150.6600
445+ $0.4521 $201.1845
575+ $0.4351 $250.1825
720+ $0.4181 $301.0320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 81,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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