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MUN5116DW1T1G

Part No MUN5116DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.25W SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 126877-MUN5116DW1T1G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MUN5116DW1T1G CAD Model

Description

ON Semiconductor MUN5116DW1T1G Dual Bias Resistor Transistor

The MUN5116DW1T1G is a high-performance dual bias resistor transistor designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This innovative component integrates two PNP transistors and features built-in bias resistors that simplify circuit design and reduce component count in various electronic applications.

Key Specifications:

  • Configuration: The device contains two PNP transistors in a single SOT-363 package, making it ideal for space-constrained applications.
  • Resistor Ratios: It comes with pre-configured resistor ratios, providing ease of design and consistent performance.
  • Power Dissipation: With a power dissipation of 150 mW, this component can handle moderate power levels suitable for a wide range of applications.
  • Collector Current: The MUN5116DW1T1G supports a maximum collector current of 100 mA, allowing for sufficient current flow through the device for various purposes.
  • Operating Temperature: It is designed to operate within a temperature range of -55°C to +150°C, ensuring reliability across diverse environmental conditions.

Applications:

The dual bias resistor transistor is versatile and can be used in numerous applications, including but not limited to:

  • Inverter circuits
  • Signal processing
  • Power management
  • Switching applications
  • Interface circuits

Advantages:

The MUN5116DW1T1G offers several advantages to designers and engineers:

  • Space Saving: The integration of two transistors and bias resistors in one compact package significantly reduces PCB space requirements.
  • Reduced Component Count: By incorporating built-in resistors, this device minimizes the need for external components, leading to a simplified design and potentially lower manufacturing costs.
  • High Performance: ON Semiconductor's commitment to quality ensures that this dual bias resistor transistor delivers consistent and reliable performance.
  • Convenience: The pre-configured resistor ratios enable easy implementation into circuits without the need for additional design calculations.

Overall, the MUN5116DW1T1G is an excellent choice for designers looking for a compact, efficient, and reliable solution for their circuit designs. Its integration of multiple components into a single package makes it an invaluable part of modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,115+ $0.0519 $57.8685
2,715+ $0.0427 $115.9305
4,205+ $0.0413 $173.6665
5,785+ $0.0400 $231.4000
7,490+ $0.0386 $289.1140
10,000+ $0.0347 $347.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,300 pieces
MOQ: 1115 pcs
Order Increment : 1 pcs
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