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Same model may have multiple batches, images only for reference.
BCX 56-16 E6433
Same model may have multiple batches, images only for reference.

BCX 56-16 E6433

Part No BCX 56-16 E6433
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description Trans GP BJT NPN 80V 1A 4-Pin(3+Tab) SOT-89 T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-89-4
Collector Base Voltage (VCBO) 100 V
Collector Emitter Breakdown Voltage 80 V
Collector Emitter Saturation Voltage 500 mV
Collector Emitter Voltage (VCEO) 80 V
Current Rating 1 A
Element Configuration Single
Emitter Base Voltage (VEBO) 5 V
Gain Bandwidth Product 100 MHz
hFE Min 25
Lead Free Yes
Max Collector Current 1 A
Maximum Operating Temperature 150 °C
Max Power Dissipation 2 W
Min Operating Temperature -65 °C
Mount Surface Mount
Number of Pins 4
Polarity NPN
RoHS Compliant
Transition Frequency 100 MHz
Voltage Rating (DC) 80 V
Win Source Part Number 967863-BCX 56-16 E6433
Categories RF Transistors(BJT)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BCX 56-16 E6433 CAD Model

Description

The Infineon Technologies BCX 56-16 E6433 is a low-popularity RF transistor (BJT) packaged in a SOT-89-4 package.

  • Current Rating: 1A
  • Gain Bandwidth Product: 100MHz
  • Maximum Power Dissipation: 2W
  • Collector Emitter Voltage (VCEO): 80V
  • Collector Base Voltage (VCBO): 100V
  • Package: SOT-89-4

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