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NCP5355DR2G

Part No NCP5355DR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC DRVR MOSF SYNC BUCK 12V 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type N-Channel MOSFET
Supply Voltage - Operating 8 V to 14 V
Logic Voltage - VIL, VIH 0.8V, 2V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap) 26V
Rise and Fall Time 15ns, 15ns
Temperature Range - Operating 0°C to 125°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 060026-NCP5355DR2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NCP5355DR2G CAD Model

Description

ON Semiconductor NCP5355DR2G Overview

The NCP5355DR2G is a robust and efficient driver-MOSFET designed and manufactured by ON Semiconductor, a leader in semiconductor solutions. This product is specifically engineered to cater to the demanding requirements of high-performance computing and power regulation systems. It is a dual MOSFET driver that is commonly utilized in CPU and memory power supplies, as well as in synchronous buck converters which are prevalent in desktops, servers, and other computing applications.

Key Features

  • High Peak Output Current: The NCP5355DR2G is capable of delivering a high peak output current, making it ideal for applications requiring a high transient response.
  • Adaptive Gate Drive: It offers an adaptive gate drive for excellent efficiency at both heavy and light loads.
  • High Frequency Operation: With its capability to operate at high frequencies, this driver-MOSFET can be used in applications requiring fast switching.
  • Dual Outputs: The device features dual outputs that allow for flexibility in driving two MOSFETs in high-efficiency synchronous buck converters.
  • Integrated Bootstrap Diode: An integrated bootstrap diode is included to reduce the number of external components required.
  • Thermal Shutdown: Built-in thermal shutdown functionality ensures protection against overheating, enhancing the reliability and longevity of the product.

Applications

The NCP5355DR2G is suitable for a wide range of applications. Its primary use is in the voltage regulation modules (VRMs) of CPUs and memory modules, where stable and efficient power delivery is critical. Additionally, it is also used in high-performance DC-DC converters, providing the necessary drive capability for high-speed switching of power MOSFETs.

Package and Quality

This driver-MOSFET is housed in a compact SOIC-8 package, making it suitable for space-constrained applications. The NCP5355DR2G also meets the rigorous quality standards set by ON Semiconductor, ensuring reliability and performance consistency across various conditions.

In summary, the NCP5355DR2G from ON Semiconductor is a versatile and reliable driver-MOSFET that offers high efficiency, robust performance, and is suitable for a variety of high-power computing and conversion applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.5447 $60.2599
40+ $2.9083 $116.3320
62+ $2.8182 $174.7284
85+ $2.7270 $231.7950
110+ $2.6357 $289.9270
147+ $2.3631 $347.3757
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,110 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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