The NSR0170P2T5G is a state-of-the-art P-Channel Mosfet designed and manufactured by ON Semiconductor, a leader in energy efficient innovations. This Mosfet is part of the company's extensive portfolio of semiconductor components that are engineered to provide high performance and reliability for a wide range of electronic applications.

Key Features

• Low Threshold Voltage: The device boasts a low threshold voltage, which makes it suitable for low voltage applications and ensures efficient operation at low gate voltages.
• High Power Dissipation: With a power dissipation of 1.25 W, this Mosfet can handle a substantial amount of energy without compromising its performance, making it ideal for power-intensive tasks.
• Small Package Size: The NSR0170P2T5G comes in a compact SOT-723 package, which is perfect for space-constrained applications while still delivering robust performance.
• Low On-Resistance: The device features a low on-resistance of 170 mOhms at a gate drive of 4.5V, contributing to its high efficiency and reduced power losses during operation.

Applications

The NSR0170P2T5G is versatile and can be used in a variety of applications, including:

• Load switch
• Power management
• Battery management systems
• Portable devices
• DC/DC converters

Specifications

Parameter Value Configuration Single Channel Mode Enhancement Channel Type P-Channel Drain-Source Breakdown Voltage -20 V Gate-Source Voltage - Vgs ±8 V Continuous Drain Current - Id -1 A Power Dissipation 1.25 W Rds On - Max @ Id, Vgs 170 mOhms @ -1 A, -4.5 V

With its combination of low power consumption, high efficiency, and compact design, the NSR0170P2T5G is an excellent choice for designers looking to optimize their power management solutions.