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NSS40600CF8T1G

Part No NSS40600CF8T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 6A 8CHIPFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 6A
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 220mV @ 400mA, 4A
Collector Cut-off Current(Max) 10μA
Typical Gain (hFE) (Min) 220 @ 1A, 2V
Maximum Power Dissipation 830mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package ChipFET
Win Source Part Number 106755-NSS40600CF8T1G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NSS40600CF8T1G CAD Model

Description

ON Semiconductor NSS40600CF8T1G Overview

The NSS40600CF8T1G is a high-performance PNP Bipolar Junction Transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is engineered to meet the requirements of a broad range of applications, offering a combination of low saturation voltage and high current gain characteristics.

Key Features

  • High Current Gain (hFE): The NSS40600CF8T1G provides a high current gain, which is beneficial in applications that require amplification of weak input signals to drive larger loads.
  • Low Collector-Emitter Saturation Voltage: This feature allows for efficient operation with minimal voltage drop across the transistor when it is in the on-state, leading to reduced power loss and better energy efficiency.
  • Collector Current: The device supports a collector current of up to 6 A, making it suitable for high-power applications.
  • Power Dissipation: With a power dissipation capability of 25 W, the NSS40600CF8T1G can handle significant amounts of power, enabling it to be used in robust applications without overheating.
  • Operating Temperature Range: It operates within a temperature range of -55°C to 150°C, which ensures reliable performance even under extreme conditions.
  • Package: The transistor comes in a compact SOT-223 surface-mount package, which is ideal for space-constrained applications and allows for efficient thermal management.

Applications

The NSS40600CF8T1G is versatile and can be used in a variety of electronic circuits, including:

  • Power management systems
  • Linear voltage regulators
  • Amplifier stages
  • Switching circuits
  • Motor control drivers

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NSS40600CF8T1G has undergone rigorous testing to ensure it meets the stringent standards for reliability and performance expected by the industry. Customers can trust this product for their critical and demanding applications.

Overall, the NSS40600CF8T1G from ON Semiconductor is a robust and efficient solution for designers looking to optimize their power management and signal amplification applications with a reliable PNP transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4966 $59.5920
285+ $0.4075 $116.1375
440+ $0.3948 $173.7120
605+ $0.3820 $231.1100
785+ $0.3693 $289.9005
1,050+ $0.3310 $347.5500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,500 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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