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NSVBSS63LT1G

Part No NSVBSS63LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 100MA SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features Bipolar (BJT) Transistor PNP 100 V 100 mA 95MHz 225 mW Surface Mount SOT-23-3 (TO-236)
Manufacturer ON Semiconductor
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SOT-23-3 (TO-236)
Family Name NSVBSS63
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number NSVBSS63LT1GOSTR, NSVBSS63LT1GOSDKR, NSVBSS63LT1GOSCT, NSVBSS63LT1G-ND
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 887696-NSVBSS63LT1G
Ultra Librarian 3D Model Ultra Librarian NSVBSS63LT1G CAD Model

Description

ON Semiconductor NSVBSS63LT1G - N-Channel Power MOSFET

The NSVBSS63LT1G is a high-performance N-Channel Power MOSFET produced by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the stringent requirements of modern electronic circuits, offering a compact, low-threshold voltage solution for a variety of applications.

With an impressive continuous drain current of 115 mA and a low threshold voltage of just 0.8 V, the NSVBSS63LT1G is optimized for low voltage operation, making it particularly suitable for portable and battery-powered devices where energy efficiency is paramount. Its low on-resistance of 5 Ohm ensures minimal power loss and heat generation, thereby enhancing the overall efficiency of the system it's integrated into.

The device comes in a small footprint SOT-23 package, which makes it ideal for space-constrained applications. Despite its small size, it does not compromise on performance, offering a drain-source voltage (Vds) of 60 V which allows it to handle significant power levels for its class.

Key features of the NSVBSS63LT1G include:

  • Low Threshold Voltage: Ensures operation at low gate voltages, making it suitable for low-power applications.
  • High Continuous Drain Current: Capable of supporting a continuous drain current of 115 mA, sufficient for a wide range of applications.
  • Low On-Resistance: Minimizes power losses and improves efficiency due to its low RDS(on) value.
  • High Voltage Tolerance: With a 60 V drain-source voltage, it can be used in circuits that experience higher voltages, providing versatility in use.
  • Compact SOT-23 Package: Ideal for space-saving designs without sacrificing performance.

Applications for the NSVBSS63LT1G are diverse and include load switch, power management, and battery protection circuits. Its robustness and reliability make it a preferred choice for designers looking to optimize their power-sensitive designs. Whether you're working on consumer electronics, portable devices, or any application that demands a high-efficiency power MOSFET, the NSVBSS63LT1G from ON Semiconductor is an excellent choice.

With its combination of low power consumption, high efficiency, and compact packaging, the NSVBSS63LT1G is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
640+ $0.0905 $57.9200
1,560+ $0.0743 $115.9080
2,410+ $0.0720 $173.5200
3,320+ $0.0697 $231.4040
4,290+ $0.0674 $289.1460
5,740+ $0.0604 $346.6960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,780 pieces
MOQ: 640 pcs
Order Increment : 1 pcs
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