The ON Semiconductor NTB6412ANG is a high-performance Power MOSFET designed to meet the rigorous demands of power conversion and management applications. It is a member of ON Semiconductor's renowned N-channel Trench MOSFET family, known for its exceptional efficiency and thermal performance.

Key Features

• High Current Capability: The NTB6412ANG supports a continuous drain current (ID) of up to 64A, making it suitable for high-power applications.
• Low On-Resistance: With an RDS(on) as low as 8.8 mΩ at VGS = 10 V, this MOSFET ensures minimal power loss and improved efficiency.
• Robust Thermal Performance: The device is encapsulated in a TO-263 (D2PAK) package, which offers excellent heat dissipation and allows for higher current handling in a compact footprint.
• Fast Switching Speed: The NTB6412ANG is optimized for fast switching, reducing transition losses and improving performance in high-frequency applications.
• Gate Charge Optimization: The device is engineered with optimized gate charge (Qg), which results in reduced switching energy and further enhances efficiency.

Applications

The NTB6412ANG is versatile and can be used in a variety of applications, including:

• DC/DC Converters
• Motor Drives
• Power Supply Units
• Synchronous Rectification
• Automotive Applications
• Switch Mode Power Supplies (SMPS)

Quality and Reliability

ON Semiconductor is committed to providing high-quality products that meet the industry's highest standards for reliability and performance. The NTB6412ANG is no exception, as it undergoes rigorous testing and quality control measures to ensure it meets the requirements of the most demanding applications.

Environmental Compliance

Aligned with ON Semiconductor's dedication to environmental responsibility, the NTB6412ANG complies with RoHS (Restriction of Hazardous Substances) directives, ensuring it is free from harmful substances and suitable for environmentally sensitive applications.