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NTJD4401NT2G

Part No NTJD4401NT2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.63A SOT363  /  Mosfet Array 2 N-Channel (Dual) 20V 630mA 270mW Surface Mount SC-88/SC70-6/SOT-363
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Rohs State Need to verify
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr onsemi
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 630mA
Rds On (Max) @ Id, Vgs 375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Power - Max 270mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NTJD44
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
Win Source Part Number 961433-NTJD4401NT2G
Ultra Librarian 3D Model Ultra Librarian NTJD4401NT2G CAD Model

Description

ON Semiconductor NTJD4401NT2G Dual P-Channel Power MOSFET

The NTJD4401NT2G from ON Semiconductor is a high-performance, dual P-Channel Power MOSFET designed to deliver efficient power management and switching in a compact package. This product is engineered for applications requiring low voltage operation and power conservation, making it an excellent choice for portable and battery-powered devices, as well as for general-purpose power switching applications.

Key Features:

  • Low On-Resistance: The NTJD4401NT2G features a low on-resistance of typically 0.039 Ohms at Vgs of -4.5V, which reduces power losses and improves efficiency in operation.
  • Compact Package: Housed in a small 6-pin TSOP package, this MOSFET saves valuable board space and is ideal for space-constrained applications.
  • Dual P-Channel: The dual P-Channel configuration allows for the control of two separate circuits within a single package, simplifying design and reducing component count.
  • Low Threshold Voltage: With a low threshold voltage, this MOSFET can be easily driven by low-voltage logic signals, making it compatible with modern microcontrollers and digital circuits.
  • High Peak Current Capability: It has a peak current capability that ensures reliable operation even under transient load conditions.

Applications:

  • Battery Management Systems
  • Power Supply Switching
  • Load/Charge Switches
  • Portable Electronic Devices
  • DC-DC Converters
  • Motor Control Circuits

The NTJD4401NT2G is designed with industry-leading technology that provides robust performance and reliability. It operates over a wide temperature range and is compliant with the RoHS directive, making it an environmentally friendly choice for electronic designs. Whether you're developing power management systems, designing portable electronics, or working on motor control applications, the NTJD4401NT2G offers the functionality and performance required for a wide range of power switching tasks.

With its combination of low on-resistance, compact form factor, and dual-channel operation, the NTJD4401NT2G from ON Semiconductor is a versatile component that enhances the efficiency and performance of your electronic designs.

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