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NTP125N02R

Part No NTP125N02R
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET PWR N-CH 125A 24V TO220AB
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 24 V
Current - Continuous Drain (Id) @ 25°C 15.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3440 pF @ 20 V
Power Dissipation (Max) 1.98W (Ta), 113.6W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number NTP125
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 649915-NTP125N02R
Ultra Librarian 3D Model Ultra Librarian NTP125N02R CAD Model

Description

The ON Semiconductor NTP125N02R is a robust N-channel Power MOSFET designed to deliver high efficiency and reliability for a wide range of applications. This power transistor is part of ON Semiconductor's advanced power technology portfolio, which is engineered to provide superior performance in terms of switching speed, power loss, and thermal management.

Key Features

  • Low On-Resistance: The NTP125N02R features an exceptionally low on-resistance (R<sub>DS(on)) which minimizes conduction losses and enhances the overall efficiency of the system.
  • High Current Capability: With the ability to handle continuous drain currents (I<sub>D) up to 125A, this MOSFET is suitable for high-power applications.
  • Enhanced Thermal Performance: The device's optimized thermal characteristics ensure reliable operation even under high temperature conditions, making it well-suited for demanding environments.
  • Low Gate Charge: The low gate charge (Q<sub>G) of the NTP125N02R leads to reduced switching losses, which is critical for high-frequency switching applications.

Applications

The NTP125N02R is versatile and can be used in a variety of applications, including:

  • Power Supply Units (PSUs)
  • DC-DC Converters
  • Motor Drives
  • Automotive Applications
  • Switching Regulators

Specifications

Parameter Value V<sub>DS (Drain-Source Voltage) 20V I<sub>D (Continuous Drain Current) 125A R<sub>DS(on) 2.1mΩ Q<sub>G (Total Gate Charge) 31nC

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability, and the NTP125N02R MOSFET is no exception. It is designed to meet rigorous industry standards, ensuring long-term performance and stability in a range of electronic systems.

For detailed product specifications, technical documents, and application support, customers are encouraged to visit ON Semiconductor's official website or contact their local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.2195 $58.1675
645+ $0.1802 $116.2290
995+ $0.1744 $173.5280
1,370+ $0.1686 $230.9820
1,775+ $0.1629 $289.1475
2,365+ $0.1467 $346.9455
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,000 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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