The ON Semiconductor NVD5117PLT4G is a state-of-the-art Power MOSFET designed to deliver high efficiency and performance for a wide range of applications. This device is a testament to ON Semiconductor's commitment to providing industry-leading power management solutions.

Key Features:

• Low On-Resistance: The NVD5117PLT4G features a very low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in applications where it is deployed.
• High Current Capability: With a continuous drain current (I<sub>D) rating of up to 30 A, this MOSFET can handle high current loads, making it suitable for demanding power applications.
• Power Dissipation: The device is capable of dissipating up to 48 W, ensuring reliable operation under high power conditions.
• Optimized Gate Charge: The optimized gate charge (Q<sub>G) results in reduced switching losses, which is critical for high-frequency switching applications.
• Single P-Channel: As a P-channel MOSFET, it allows for simpler drive circuitry in certain configurations, particularly in high-side switching applications.

Applications:

The NVD5117PLT4G is versatile and can be used in a variety of applications including:

• Power Supply Circuits
• DC/DC Converters
• Motor Drives
• Battery Management Systems
• Load Switching
• Automotive Applications

Package and Reliability:

This MOSFET is available in a DPAK (TO-252) package, which is known for its compact footprint and excellent thermal performance. The NVD5117PLT4G is also characterized by its robustness and reliability, meeting the stringent requirements of the automotive industry with an AEC-Q101 qualification.

Environmental Compliance:

ON Semiconductor ensures that the NVD5117PLT4G complies with environmental regulations, including RoHS and Pb-Free specifications, reflecting the company's dedication to environmental sustainability and safety.