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PZT2907AT1G

Part No PZT2907AT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 0.6A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 1.6V @ 50mA, 500mA
Collector Cut-off Current(Max) 10nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 10V
Maximum Power Dissipation 1.5W
Frequency - Transition 200MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 027016-PZT2907AT1G
Family Name PZT2907A
Introduction Date March 13, 2001
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2023
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PZT2907AT1G CAD Model

Description

ON Semiconductor PZT2907AT1G PNP Transistor

The PZT2907AT1G is a high-performance PNP bipolar transistor from ON Semiconductor, renowned for its efficiency and reliability in a variety of electronic applications. This device is designed to offer a blend of low voltage operation and high current handling, making it an ideal choice for amplification and switching applications where space is at a premium.

Constructed using ON Semiconductor's innovative process technology, the PZT2907AT1G boasts an impressive collector-emitter voltage (VCEO) of -60V, and a collector current (IC) of up to -600mA, ensuring robust performance for a wide range of circuit designs. The device's power dissipation is rated at 1W, providing a good balance between power handling and thermal efficiency.

The PZT2907AT1G comes in a small surface-mount SOT-223 package, which is a popular choice for space-constrained applications. Its compact footprint and low profile make it suitable for high-density PCB layouts, while still being manageable for automated assembly processes. The SOT-223 package also offers excellent power dissipation characteristics for its size, contributing to the transistor's overall performance and longevity.

Key electrical characteristics of the PZT2907AT1G include a DC current gain (hFE) range of 100 to 300, ensuring consistent gain performance across various conditions. The device also features a low collector-emitter saturation voltage (VCE(sat)), which helps to minimize power loss and improve efficiency when the transistor is in the on-state.

ON Semiconductor's commitment to quality is reflected in the PZT2907AT1G's compliance with the rigorous RoHS and Pb-Free standards, which ensures that the product is environmentally friendly and suitable for use in green electronics. The device is also characterized for operation from -55°C to +150°C, providing reliable performance across a broad temperature range, making it suitable for industrial, automotive, and consumer applications.

In summary, the PZT2907AT1G from ON Semiconductor is a versatile PNP transistor that offers an optimal blend of size, power handling, and performance. Its robust electrical characteristics and compact package make it a top choice for designers looking to create efficient and reliable electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1180 $50.1500
905+ $0.1105 $100.0025
1,405+ $0.1068 $150.0540
2,015+ $0.0993 $200.0895
2,620+ $0.0956 $250.4720
3,270+ $0.0918 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 425 pcs
Order Increment : 1 pcs
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