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RFP4N100

Part No RFP4N100
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 4.3A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Rds On (Max) @ Id, Vgs 3.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 20 V
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number RFP4N
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 660116-RFP4N100
Ultra Librarian 3D Model Ultra Librarian RFP4N100 CAD Model

Description

Product Overview: RFP4N100 MOSFET by ON Semiconductor

The RFP4N100 is a high-performance N-channel power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This device is optimized for power switching applications where high efficiency is a critical factor. The RFP4N100 is well-suited for a wide range of applications, including power supplies, converters, and motor drives.

Key Features

  • High Voltage Tolerance: With a drain-to-source voltage (V<sub>DS) of 1000V, the RFP4N100 is capable of handling high voltage applications, ensuring reliability and robustness in demanding conditions.
  • Low On-Resistance: The device features a low on-state resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency, making it an excellent choice for high-efficiency power designs.
  • Fast Switching Speed: The fast switching capability of the RFP4N100 reduces switching losses and allows for higher frequency operation, which can contribute to the reduction of the size and weight of the overall system.
  • High Input Impedance: This MOSFET's high input impedance ensures minimal drive power is required, which can lead to lower operational costs over time.

Electrical Characteristics

The RFP4N100 boasts a continuous drain current (I<sub>D) of 4.3A, making it suitable for applications that require a moderate level of current. Its power dissipation (P<sub>D) is rated at 125W, which is indicative of its ability to handle significant amounts of power without compromising performance. The device also features a threshold voltage (V<sub>GS(th)) that ranges from 2.0V to 4.0V, which provides design flexibility.

Applications

This MOSFET is a versatile component that can be used in various applications where power efficiency and reliability are paramount. It is particularly useful in high-voltage power supplies, DC-DC converters, and high-voltage switching circuits. Its robust design also makes it an excellent choice for motor control applications, such as in industrial drives and automotive systems.

Quality and Reliability

ON Semiconductor is committed to delivering high-quality and reliable components. The RFP4N100 is no exception, as it is built to meet stringent quality standards, ensuring long-term reliability for the end-user's application. Its performance is backed by ON Semiconductor's expertise in power management and semiconductor technology.

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