The SBC817-25LT3G from ON Semiconductor is a high-performance NPN bipolar (BJT) single transistor designed for use in a wide array of electronic applications. This versatile component is well-suited for amplification and switching purposes, thanks to its robust design and excellent electrical characteristics.

Key Features

• Device Type: NPN Bipolar Transistor
• Package: SOT-23-3, a compact surface-mount package that is ideal for automated assembly processes and space-constrained applications.
• Collector-Emitter Voltage (Vceo): 45V, providing a good margin for voltage handling in circuits.
• Collector Current (Ic): Up to 500mA, suitable for moderate power applications.
• DC Current Gain (hFE): 160 to 400 at 10mA, ensuring a consistent and predictable amplification factor across various operating conditions.
• Power Dissipation (Pd): 225mW, allowing for decent power handling capability within its small form factor.
• Operating Temperature Range: -55°C to +150°C, making it reliable for use in harsh environmental conditions.
• RoHS Compliant: Yes, adhering to environmental standards and regulations for hazardous substances.

Applications

The SBC817-25LT3G is designed for general-purpose use in a variety of electronic circuits. Its typical applications include:

• Audio amplifiers and pre-amplifiers
• Signal processing
• Power management circuits
• Switching and load drivers
• Consumer electronics
• Industrial control systems

Quality and Reliability

ON Semiconductor is known for its commitment to quality and the SBC817-25LT3G is no exception. It is manufactured to high standards, ensuring reliable performance and longevity in your electronic projects. With its excellent electrical characteristics and robust package, the SBC817-25LT3G is an ideal choice for designers looking for a dependable NPN transistor for their next project.