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SMMUN2114LT1G

Part No SMMUN2114LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.246W SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 246mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 1098550-SMMUN2114LT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SMMUN2114LT1G CAD Model

Description

ON Semiconductor SMMUN2114LT1G Product Overview

The SMMUN2114LT1G is a state-of-the-art PNP transistor from ON Semiconductor, a leading provider of semiconductor-based solutions. This product is designed to deliver high performance and reliability for a wide range of applications in the electronics industry. With its compact SOT-23 surface-mount package, the SMMUN2114LT1G is an ideal choice for space-constrained applications where efficient power management and control are crucial.

Key Features

  • PNP Bipolar Transistor: The SMMUN2114LT1G is a PNP transistor, which is typically used for amplification and switching purposes. It allows for a high degree of control over electronic signals, making it a versatile component in various circuits.
  • High Current Capability: This device can handle continuous collector currents up to 800 mA, making it suitable for driving moderate loads.
  • Low Voltage Operation: With a collector-emitter voltage (VCEO) of -50V, it can operate efficiently in low-voltage environments, which is essential for battery-operated devices and portable electronics.
  • Power Dissipation: The SMMUN2114LT1G can dissipate up to 225 mW of power, ensuring that it can manage its thermal performance during operation.
  • High Gain Bandwidth Product: It offers a transition frequency of 50 MHz, which is indicative of its ability to handle high-speed signals.

Applications

The SMMUN2114LT1G is suitable for a variety of applications, including but not limited to:

  • Power management in portable devices
  • Signal amplification in audio and video equipment
  • Switching circuits in consumer electronics
  • Driver stages in amplifiers
  • Load management in battery-powered applications

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The SMMUN2114LT1G is manufactured under strict quality control standards, ensuring that it meets the rigorous requirements of the electronics industry. Its robust design ensures long-term reliability, making it a trusted component for manufacturers and engineers alike.

In summary, the SMMUN2114LT1G from ON Semiconductor is a versatile and efficient PNP transistor that offers excellent performance for a broad range of electronic applications. Its compact form factor, combined with its high current capacity and low voltage operation, makes it an essential component for modern electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
870+ $0.0577 $50.1990
2,115+ $0.0473 $100.0395
3,270+ $0.0459 $150.0930
4,505+ $0.0444 $200.0220
5,830+ $0.0429 $250.1070
7,795+ $0.0385 $300.1075
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 43,920 pieces
MOQ: 870 pcs
Order Increment : 1 pcs
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