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UNR5213G0L

Name: UNR5213G0L
Brand: Panasonic
SKU: 388589
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	UNR5213G0L
Manufacturer	Panasonic
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS NPN 150MW SMINI3
Datasheet	UNR5213G0L Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Panasonic Electronic Components
Packaging	Reel - TR
Status	Obsolete(EOL)
Transistor Polarity	NPN - Pre-Biased
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	47k
Resistor - Emitter Base (R2) (Ohms)	47k
Typical Gain (hFE) (Min)	80 @ 5mA, 10V
Max Vce (sat)	250mV @ 300μA, 10mA
Collector Cut-off Current(Max)	500nA
Frequency - Transition	150MHz
Maximum Power Dissipation	150mW
Mounting	SMD (SMT)
Case / Package	SMini3-F2
Win Source Part Number	113199-UNR5213G0L
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian UNR5213G0L CAD Model

Alternative Products

Description

The Panasonic Electronic Components UNR5213G0L is a pre-biased NPN transistor with a maximum collector-emitter breakdown voltage of 50V and a maximum current collector of 100mA.

Frequency transition: 150MHz
Typical gain: 80 @ 5mA and 10V
Maximum power dissipation: 150mW
Suitable for: use in discrete semiconductor products
Case/package: SMini3-F2
Mounting: SMD (SMT) technology
Resistor values (R1 and R2): 47k ohms each
Status: obsolete (EOL)
Popularity rating: medium

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