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BD544C

Part No BD544C
Manufacturer Power Innovations Ltd
Catalog Transistors (BJT) - Single
Description PNP SILICON POWER TRANSISTORS
Sample
Rohs State rohs
ECAD Module
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Manufacturer Power Innovations Ltd
Win Source Part Number 1152791-BD544C
Manufacturer Homepage www.bourns.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BD544C CAD Model

Description

The BD544C is a silicon NPN power bipolar junction transistor (BJT) manufactured by Power Innovations Ltd. It is designed for use in a variety of high-power switching and amplification applications. The transistor is encased in a TO-220 package, which allows for efficient heat dissipation, crucial for maintaining performance and reliability under heavy load conditions.

Applications:

  • Linear and switching industrial equipment.
  • Power amplifiers.
  • Voltage regulators.
  • Motor control circuits.
  • Inverters.

Features:

  • High collector current (Ic): The BD544C is capable of handling a substantial collector current, making it suitable for driving high-power loads.
  • High breakdown voltage (Vceo): The high collector-emitter breakdown voltage ensures that the transistor can withstand significant voltage levels without failing.
  • Low saturation voltage: This feature minimizes power loss across the transistor when it is fully turned on, improving overall efficiency.
  • Fast switching speed: Enables efficient operation in switching circuits.
  • TO-220 package: Provides effective heat dissipation.

Benefits:

  • Improved system efficiency due to low saturation voltage.
  • Enhanced reliability due to high breakdown voltage.
  • Versatile use in both linear and switching applications.
  • Easy to mount and cool thanks to the TO-220 package.
  • Robust performance in demanding industrial environments.

Additional Details:

The BD544C's technical specifications include a collector-emitter voltage (VCEO) typically around 100V, a collector current (IC) of up to 4A, and a power dissipation (PD) of around 40W. These parameters make it suitable for medium to high power applications. The transistor's gain (hFE) is typically within a range that allows for easy biasing and stable operation. The TO-220 package facilitates mounting onto a heatsink to manage thermal dissipation effectively, ensuring the transistor operates within its safe operating area even under high-load conditions. Always consult the manufacturer's datasheet for precise specifications and application guidelines to ensure optimal performance and prevent damage to the component or associated circuitry.

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