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HYB25D128800T-7

Part No HYB25D128800T-7
Manufacturer Qimonda
Catalog DDR
Description DDR-266 16Mx8
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 944309-HYB25D128800T-7
Series *
Ultra Librarian 3D Model Ultra Librarian HYB25D128800T-7 CAD Model

Description

The HYB25D128800T-7 is a 128Mbit DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random Access Memory) chip manufactured by Qimonda (formerly Infineon Technologies). It is designed for high-performance applications requiring fast data access and efficient data transfer.

Applications:

  • PCs and Laptops: Used as system memory (RAM) in desktop computers and laptops.
  • Graphics Cards: Found in older generation graphics cards as video memory.
  • Networking Equipment: Employed in routers, switches, and other network devices for buffering and data processing.
  • Digital TVs: Used in digital television sets for frame buffering and image processing.
  • Embedded Systems: Integrated into embedded systems that require fast memory access.

Features:

  • Capacity: 128Mbit (16M x 8)
  • Data Rate: DDR2 (Double Data Rate 2)
  • Clock Frequency: Operates at frequencies up to 133 MHz (266 MHz effective).
  • Interface: Standard DDR2 SDRAM interface
  • Power Supply: Operates at a voltage of 1.8V
  • Package: Typically available in a TSOP or FBGA (Fine-Pitch Ball Grid Array) package.

Benefits:

  • High Bandwidth: DDR2 technology provides significantly higher data transfer rates compared to DDR SDRAM.
  • Improved Performance: Faster clock speeds and data transfer rates enhance overall system performance.
  • Lower Power Consumption: Operates at a lower voltage than DDR SDRAM, resulting in reduced power consumption.
  • Increased Density: Offers higher memory density compared to older memory technologies.

Additional Details:

The HYB25D128800T-7 is compliant with JEDEC standards for DDR2 SDRAM. It supports various DDR2 features such as On-Die Termination (ODT) and Additive Latency. It's designed for reliable operation in a wide range of temperatures. Its 16M x 8 configuration allows for efficient memory organization. The use of FBGA or TSOP packaging enables higher pin density and improved signal integrity. Due to its age, this memory chip is more commonly found in legacy systems. Its key benefits included increased memory bandwidth and reduced power consumption compared to DDR SDRAM.

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