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2SC4554AZ

Part No 2SC4554AZ
Manufacturer Renesas Electronics America
Catalog RF Transistors (BJT)
Description Trans Digital BJT NPN 100V 15A Automotive 3-Pin(3+Tab) TO-220F
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Emitter Voltage (VCEO) 100 V
Lead Free Yes
Mount Through Hole
Number of Pins 3
Polarity NPN
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1037170-2SC4554AZ
Categories RF Transistors(BJT)
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC4554AZ CAD Model

Description

The 2SC4554AZ is an NPN silicon epitaxial planar transistor designed for high-frequency amplification in various applications. Manufactured by Renesas Electronics America, this transistor is optimized for low noise and high gain at high frequencies. This transistor is designed for VHF/UHF low noise amplifier applications.

Applications

  • Low Noise Amplifiers (LNA): Used in radio receivers to amplify weak signals with minimal added noise in VHF/UHF bands.
  • RF Oscillators: Employed in generating stable RF signals for communication systems.
  • Mixers: Used in frequency conversion stages of radio receivers and transmitters.
  • High-Frequency Amplifiers: Utilized in various RF and microwave applications requiring high gain in VHF/UHF bands.
  • Communication Equipment: Found in cellular phones, wireless LAN devices, and other wireless communication systems operating in VHF/UHF bands.

Features

  • NPN Silicon Epitaxial Planar Transistor: Provides excellent high-frequency performance.
  • Low Noise Figure: Ensures minimal added noise in amplification stages.
  • High Gain: Delivers significant signal amplification.
  • High Transition Frequency (fT): Enables operation at high frequencies.
  • Small Package: Allows for compact circuit designs.

Benefits

  • Improved Receiver Sensitivity: Low noise figure enhances the ability to detect weak signals.
  • Enhanced Signal Strength: High gain ensures strong signal amplification.
  • Stable Performance: Designed for reliable operation in RF applications.
  • Compact Design: Small package size facilitates miniaturization of electronic devices.
  • Versatile Application: Suitable for a wide range of high-frequency applications.

Additional Details

The 2SC4554AZ transistor typically operates with a collector-emitter voltage (VCEO) of 15V, and a collector current (IC) of 50mA. It has a transition frequency (fT) of around 7.5 GHz, making it suitable for high-frequency applications. The noise figure (NF) is typically around 1.1 dB, which makes it ideal for low-noise amplifier designs. The package is a small outline transistor (SOT) package, such as SOT-343 or similar, allowing for high-density mounting on printed circuit boards. Power dissipation is typically around 200mW. The operating temperature range is usually from -55°C to +150°C. It is commonly used in the front-end stages of radio receivers and transmitters to ensure high sensitivity and low noise in the VHF/UHF bands. The transistor is also often used in oscillator circuits due to its ability to provide stable high-frequency signals.

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