The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using high-performance, high-reliability CMOS technology.

Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby power mode, as long as CS remains HIGH. This capability provides significant system level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery.

All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.

The IDT6116SA/LA is packaged in 24-pin 300mil plastic DIP, 24-pin 600mil and 300mil ceramic DIP, or 24-lead gull-wing SOIC providing high board-level packing densities.

Military grade product is manufactured in compliance to MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.