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Same model may have multiple batches, images only for reference.
GN1L4M-T2-A
Same model may have multiple batches, images only for reference.

GN1L4M-T2-A

Part No GN1L4M-T2-A
Manufacturer Renesas Electronics America
Catalog Transistors (BJT) - Single, Pre - Biased
Description SMALL SIGNAL BIPOLAR TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 95 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 200mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Power - Max 150 mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70
Base Product Number GN1L4M
Standard Package 2,664 pcs
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 872825-GN1L4M-T2-A
Ultra Librarian 3D Model Ultra Librarian GN1L4M-T2-A CAD Model

Description

The GN1L4M-T2-A is a PNP pre-biased bipolar transistor manufactured by Renesas Electronics America.

  • Power Rating: 150 mW
  • Collector-Emitter Breakdown Voltage: 50 V
  • Maximum Collector Current: 100 mA
  • Transistor Type: PNP Pre-Biased
  • Vce Saturation: 200mV @ 250μA base current and 5mA collector current
  • Mounting Type: Surface Mountable
  • Package: SC-70
  • Standard Package Quantity: 2,664 pieces
  • ECCN: EAR99
  • Product Status: Obsolete

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Quantity Unit Price Ext. Price
50+ $1.1989 $59.9450
120+ $0.9841 $118.0920
185+ $0.9529 $176.2865
255+ $0.9228 $235.3140
325+ $0.8917 $289.8025
435+ $0.7993 $347.6955
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Availability: 3,000 pieces
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