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DDTB114GU-7-F

Part No DDTB114GU-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr Diodes Incorporated
Package Tape & Reel
Product Status Obsolete
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA (ICBO)
Frequency - Transition 200 MHz
Power - Max 200 mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SOT-323
Base Product Number DDTB114
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 584298-DDTB114GU-7-F
Ultra Librarian 3D Model Ultra Librarian DDTB114GU-7-F CAD Model

Description

Diodes Incorporated DDTB114GU-7-F - Pre-Biased Bipolar Transistor

The DDTB114GU-7-F from Diodes Incorporated is a robust, high-performance pre-biased bipolar transistor designed for a variety of applications requiring a combination of low-power dissipation and moderate current handling. This PNP transistor comes with a built-in biasing resistor, simplifying circuit design and reducing component count, which is particularly advantageous for compact and density-critical designs.

Encased in a small, surface-mount SOT-323 package, the DDTB114GU-7-F is ideal for automated assembly processes, and its compact footprint makes it suitable for use in space-constrained applications. The device features a collector-emitter voltage (VCEO) of -50V and a collector current (IC) of -100mA, making it a versatile choice for various low-voltage applications.

One of the key advantages of the DDTB114GU-7-F is its integrated bias resistor, which has a resistance of 10kΩ. This integrated resistor not only simplifies the design by reducing the number of external components required but also ensures stable operation by providing consistent biasing. The device also boasts a high gain bandwidth product (fT) of 250MHz, offering excellent frequency response for amplification purposes.

The transistor is designed to offer high reliability and performance under a wide range of operating conditions. It is characterized by low leakage currents and low saturation voltage, which contribute to its efficient operation. Furthermore, the DDTB114GU-7-F is RoHS compliant, meaning it meets the environmental standards restricting the use of hazardous substances in electronic equipment. This makes it a suitable choice for manufacturers looking to create environmentally friendly products.

Overall, the DDTB114GU-7-F is a great choice for designers looking for a reliable pre-biased PNP transistor that offers ease of integration, space-saving on PCBs, and efficient performance for a wide array of applications including but not limited to signal processing, power management, and switch control circuits.

For detailed specifications and application notes, designers and engineers are encouraged to consult the datasheet provided by Diodes Incorporated.

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