The H7N0308LS-E is an N-channel power MOSFET manufactured by Renesas Electronics America. This MOSFET is designed for high-efficiency power switching applications, offering low on-resistance and fast switching speeds. It is commonly used in DC-DC converters, motor control, and load switching.

Applications

• DC-DC converters
• Motor control
• Load switching
• Power management circuits
• Synchronous rectification

Features

• N-channel MOSFET
• Low on-resistance (RDS(on))
• Fast switching speed
• Logic level gate drive
• Avalanche rated
• RoHS compliant

Benefits

• High efficiency in power conversion applications
• Reduced power loss due to low on-resistance
• Improved system performance with fast switching
• Simplified gate drive circuitry
• Robust performance under transient conditions
• Environmentally friendly due to RoHS compliance

Technical Specifications

The H7N0308LS-E has the following key specifications:

• Drain-Source Voltage (VDS): 30V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 8A
• On-Resistance (RDS(on)): 16 mΩ (VGS = 10V)
• Gate Threshold Voltage (VGS(th)): 1.0 - 2.5V
• Total Gate Charge (Qg): 12 nC
• Operating and Storage Temperature Range: -55°C to +150°C
• Package: SOP-8

This MOSFET provides efficient and reliable performance in a variety of power switching applications requiring low on-resistance and fast switching.