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Same model may have multiple batches, images only for reference.
NP60N04VUK-E1-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP60N04VUK-E1-AY

Part No NP60N04VUK-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 60A TO-252
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 3680pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 105W (Tc)
Maximum Rds On at Id,Vgs 3.85 mOhm @ 30A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083341-NP60N04VUK-E1-AY
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NP60N04VUK-E1-AY CAD Model

Description

The NP60N04VUK-E1-AY is an electronic component manufactured by Renesas Electronics America Inc.

  • Popularity: Medium
  • Technology: MOSFET
  • Power Dissipation: 1.2W (Ta), 105W (Tc)
  • Continuous Drain Current @ 25°C: 60A (Tc)
  • Maximum Rds On @ Id, Vgs: 3.85 mOhm @ 30A, 10V

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