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Same model may have multiple batches, images only for reference.
RQA0009TXDQS#H1
Same model may have multiple batches, images only for reference.

RQA0009TXDQS#H1

Part No RQA0009TXDQS#H1
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description RQA0009TXDQS - N-Channel MOSFET / N-Channel 16 V 3.2A (Ta) 15W (Tc) Surface Mount UPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 16 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
Vgs(th) (Max) @ Id 0.8V @ 1mA
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 76 pF @ 0 V
Power Dissipation (Max) 15W (Tc)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package UPAK
Package / Case TO-243AA
Standard Package 1 pcs
Win Source Part Number 892287-RQA0009TXDQS#H1
Ultra Librarian 3D Model Ultra Librarian RQA0009TXDQS#H1 CAD Model

Description

The RQA0009TXDQS#H1 is a single N-channel MOSFET designed for discrete semiconductor applications.

  • Package: Bulk
  • Standard Package: 1 piece
  • Vdss: 16V
  • Id @ 25°C: 3.2A
  • Vgs(th) @ 1mA: 0.8V
  • Power Dissipation @ Tc: 15W
  • Mounting: Surface Mount
  • Package: TO-243AA
  • Operating Temperature: Up to 150°C

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