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Same model may have multiple batches, images only for reference.
DTA123EU3T106 Real Image
Same model may have multiple batches, images only for reference.

DTA123EU3T106

Part No DTA123EU3T106
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description DTA123EU3 IS AN DIGITAL TRANSIST / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount UMT3
Datasheet
DTA123EU3T106 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Rohm Semiconductor
Package Tape & Reel
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Frequency - Transition 250 MHz
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package UMT3
Base Product Number DTA123
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names DTA123EU3T106TR,DTA123EU3T106CT,DTA123EU3T106DKR
Standard Package 3,000
Win Source Part Number 1110541-DTA123EU3T106
Ultra Librarian 3D Model Ultra Librarian DTA123EU3T106 CAD Model

Description

The DTA123EU3T106 PNP - Pre-Biased Transistor is a high-quality transistor that is designed to provide a stable performance in a variety of applications.

  • Transistor Type: PNP - Pre-Biased
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Power - Max: 200 mW
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Frequency - Transition: 250 MHz
  • Mounting Type: SMD (SMT)
  • Packaging: Tape & Reel
  • Manufacturer: Rohm Semiconductor

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