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EMD30T2R

Part No EMD30T2R
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.15W EMT6
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA, 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V, 30V
Resistor - Base (R1) (Ohms) 10k, 1k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 5V / 140 @ 100mA, 2V
Max Vce (sat) 300mV @ 500μA, 10mA / 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz, 260MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package EMT6
Win Source Part Number 015302-EMD30T2R
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian EMD30T2R CAD Model

Description

EMD30T2R: Reliable Stability for Electronical Applications

The EMD30T2R diode brings innovative stability and efficiency to modern electronics. This component is quintessential for improving the performance of electronic circuits with its unique features and reliability.

Features and Benefits:

  • Optimized for low power consumption.
  • Ensures long-term reliability with robust construction.
  • Consistent performance under varying temperatures.
  • Seamless integration in a wide array of electronic frameworks.

Application and Projects:

  • Serves as a fundamental component in power conversion modules.
  • Applicable in surge protection systems.
  • Frequent use in speed controllers for motor applications.
  • Beneficial for data transmission in telecommunication devices.

Additional Details: The EMD30T2R embodies precision and excellence, tailored for demanding electronic projects.

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