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Same model may have multiple batches, images only for reference.
R6047ENZ4C13
Same model may have multiple batches, images only for reference.

R6047ENZ4C13

Part No R6047ENZ4C13
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 47A TO247 / N-Channel 600 V 47A (Tc) 481W (Tc) Through Hole TO-247
Datasheet
R6047ENZ4C13 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Rohm Semiconductor
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 25.8A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3850 pF @ 25 V
FET Feature -
Power Dissipation (Max) 481W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Base Product Number R6047
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355204-R6047ENZ4C13
Ultra Librarian 3D Model Ultra Librarian R6047ENZ4C13 CAD Model

Description

The R6047ENZ4C13 is a N-Channel MOSFET designed for high voltage applications. Manufactured by Rohm Semiconductor, this MOSFET offers a drain to source voltage (Vdss) of 600V and a continuous drain current (Id) of 47A @ 25°C.

  • FET Type: MOSFET N-Channel
  • Vdss: 600V
  • Id @ 25°C: 47A
  • Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
  • Qg @ Vgs: 145 nC @ 10V
  • Package / Case: TO-247-3
  • Mounting Type: Through Hole
  • Power Dissipation (Max): 481W @ Tc = 25°C
  • Standard: AEC-Q100

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