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Same model may have multiple batches, images only for reference.
RSS110N03FU6TB Real Image
Same model may have multiple batches, images only for reference.

RSS110N03FU6TB

Part No RSS110N03FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8SOIC
Datasheet
RSS110N03FU6TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 17nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 1300pF @ 10V
Vgs (Maximum) 20V
Power Dissipation (Maximum) 2W (Ta)
Rds On (Maximum) @ Id, Vgs 10.7 mOhm @ 11A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 8-SOP
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Homepage www.rohm.com
Win Source Part Number 741311-RSS110N03FU6TB
Popularity Medium
Supply and Demand Status Balance
Family Name RSS110N03
Introduction Date June 26, 2003
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian RSS110N03FU6TB CAD Model

Description

The Rohm Semiconductor RSS110N03FU6TB is an N-channel MOSFET transistor.

  • Continuous Drain Current: 11A (Ta)
  • Drain-Source Voltage: 30V
  • Package: 8-SOIC
  • Mounting Type: SMD
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1300pF @ 10V
  • Maximum Gate Charge: 17nC @ 5V
  • Maximum Power Dissipation: 2W (Ta)
  • Maximum Rds On @ Id,Vgs: 10.7 mOhm @ 11A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
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