The SCT3040KLGC11 is a SiCFET (Silicon Carbide) N-channel FET transistor from Rohm Semiconductor.

• Drain to Source Voltage (Vdss): 1200 V
• Continuous drain current (Id): Up to 55A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
• Gate charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
• Input capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
• Power dissipation (Max): 262W (Tc)
• Temperature range: 175°C (TJ)
• Package: Through Hole TO-247-3
• Ideal for use in: Discrete Semiconductor Products such as Transistors - FETs, MOSFETs - Single.