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Same model may have multiple batches, images only for reference.
SH8M14TB1 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

SH8M14TB1

Part No SH8M14TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 9A/7A SOP
Datasheet
SH8M14TB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A, 7A
Maximum Rds On at Id,Vgs 21 mOhm @ 9A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 8.5nC @ 5V
Max Input Capacitance 630pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1095652-SH8M14TB1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SH8M14TB1 CAD Model

Description

The Rohm Semiconductor 1095652-SH8M14TB1 is a discrete semiconductor product that is designed for use in various applications.

  • FET Channel: N and P-channel
  • Gate Features: Logic level gate
  • Case/Package: 8-SOP
  • Maximum Power Dissipation: 2W
  • Temperature Range: 150°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 21 mOhm @ 9A, 10V
  • Status: Not for new designs
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4204 $58.8560
335+ $0.3453 $115.6755
520+ $0.3350 $174.2000
715+ $0.3234 $231.2310
925+ $0.3130 $289.5250
1,235+ $0.2807 $346.6645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,800 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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