The K4S641632F-TC60T00 is a 64M x 16 bit Synchronous DRAM (SDRAM) component manufactured by Samsung. This memory chip is designed for applications requiring high-speed data transfer and substantial memory capacity.

Applications

• Graphics cards
• Gaming Consoles
• Networking Devices
• Embedded Systems
• Industrial Control Systems

Features

• 64M x 16 bit configuration
• Synchronous operation, synchronized to a clock signal
• LVTTL compatible inputs and outputs
• Single 3.3V (±0.3V) power supply
• Four internal banks for concurrent operations
• Programmable burst length (1, 2, 4, 8, full page)
• Programmable burst type (sequential & interleaved)
• CAS Latency (CL) of 2 or 3 clocks
• Auto Precharge functionality
• Self Refresh Mode

Benefits

• High bandwidth for rapid data access
• Low latency enhances system responsiveness
• Simplified system integration due to LVTTL compatibility
• Reduced power consumption with a single power supply
• Improved memory management via bank architecture
• Flexible data transfer modes with programmable burst options

Additional Details

The K4S641632F-TC60T00 is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface. All control, address, and data inputs are registered on the positive going edge of the clock (CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Burst access is initiated with the registration of an Activate command followed by a Read or Write command. The device provides programmable burst lengths of 1, 2, 4, 8, or full page, with a burst terminate option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. A self refresh mode is also provided, enabling the device to automatically retain data during periods of inactivity.