The Samsung K4T51163QF-BCE7 is a 512Mbit DDR2 SDRAM (Synchronous Dynamic Random-Access Memory) component. This memory chip is designed to deliver high-speed data access and storage for various applications, offering a balance between performance and power efficiency.

Applications

• Graphics cards
• Gaming consoles
• Embedded systems
• Networking devices
• Digital TVs

Features

• 512Mbit (32M x 16) memory density
• DDR2 interface for high-speed data transfer
• Operating frequency up to 800MHz
• Double data rate architecture; two data transfers per clock cycle
• Differential clock inputs (CK, /CK)
• Data mask (DM) for write masking
• On-chip DLL (Delay-Locked Loop) for improved timing
• Lead-free and RoHS compliant

Benefits

• Enhanced system performance due to high memory bandwidth
• Improved graphics rendering capabilities
• Efficient data processing in networking applications
• Reduced power consumption compared to older memory technologies
• Increased memory capacity for demanding applications

Technical Specifications

The K4T51163QF-BCE7 operates at a voltage of 1.8V. It supports various DDR2 features such as prefetch of 4 bits per memory location. The component is available in a FBGA (Fine-pitch Ball Grid Array) package for surface mounting on PCBs. The operating temperature range is typically from 0°C to 85°C. It is designed to meet the JEDEC standards for DDR2 SDRAM.

This DDR2 SDRAM device offers a reliable and cost-effective memory solution for diverse applications. Its high-speed interface and adequate capacity contribute to improved overall system performance.