The K6T4008C1B-GB70T00 is a 4M-bit static RAM (SRAM) device manufactured by Samsung. This SRAM is specifically engineered for applications demanding high-speed data access and low power consumption. It's a suitable choice for various memory applications including embedded systems, cache memory, and portable devices.

Applications:

• Embedded Systems
• Cache Memory in Processors
• Portable Devices (e.g., handheld gaming consoles)
• Industrial Control Systems
• Networking Equipment

Features:

• High-speed access time: 70ns
• Low operating current
• Single 3.3V power supply
• TTL compatible inputs and outputs
• Temperature range: -40°C to +85°C
• 4,194,304-bit memory organization (512K x 8)

Benefits:

• Fast data retrieval leading to enhanced system performance.
• Extended battery life in portable applications due to reduced power consumption.
• Easy integration with other digital circuits due to TTL compatibility.
• Reliable operation across a broad temperature range.
• High memory density for compact system design.

Additional Details:

The K6T4008C1B-GB70T00 utilizes advanced CMOS technology to achieve its high-performance and low-power characteristics. The memory array is organized as 512K words of 8 bits each. This SRAM supports various operating modes, including read, write, and standby, providing flexibility in power management. The device's compact package allows for efficient board layout. The K6T4008C1B-GB70T00 is designed to provide reliable data storage and retrieval in a variety of demanding applications. Detailed electrical characteristics, timing diagrams, and package information can be found in the official Samsung datasheet. The device is suitable for applications requiring non-volatile data storage, where data must be retained even when power is off.