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2N6287

Part No 2N6287
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Description POWER TRANSISTORS(20A,160W) | TRANS PNP DARL 100V 20A TO-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Type PNP - Darlington
Current - Collector (Ic) (Maximum) 20A
Voltage - Collector Emitter Breakdown (Maximum) 100V
Vce Saturation (Maximum) at Ib, Ic 3V at 200mA, 20A
Current - Collector Cutoff (Maximum) 1mA
DC Current Gain (hFE) (Minimum) at Ic, Vce 750 at 10A, 3V
Maximum Power 160W
Temperature Range - Operating 200°C
Mounting Style Chassis Mount
Manufacturer Package TO-204AA, TO-3
Supplier Device Package TO-3
Family Part Number 2N6287
Manufacturer Pack Quantity 20
MSL Level 1 (Unlimited)
Win Source Part Number 1124095-2N6287
Manufacturer Homepage www.mospec.com.tw
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian 2N6287 CAD Model

Description

STMicroelectronics 2N6287 Power Transistor

The 2N6287 is a robust silicon NPN power transistor developed by STMicroelectronics, designed to cater to a wide array of power amplification and switching applications. This versatile component is highly sought after in the electronics industry due to its reliability and performance in high-power circuits.

With an impressive collector-emitter voltage (VCEO) of 80V and a collector current (IC) rating up to 20A, the 2N6287 is capable of handling significant power levels. The device is characterized by a maximum power dissipation of 160W, which allows it to operate effectively in strenuous conditions without compromising its longevity or efficiency.

The transistor comes in a TO-3 package, known for its excellent thermal conduction properties. The metal casing not only provides robust physical protection but also ensures efficient heat dissipation, critical for maintaining thermal stability during high-load operations. This makes the 2N6287 an ideal choice for power regulation tasks in commercial and industrial electronics where thermal management is a key concern.

One of the notable features of the 2N6287 is its high current gain bandwidth product (fT), which typically stands at 4MHz. This parameter indicates the transistor's ability to amplify signals with a high rate of change, making it suitable for audio amplification, high-frequency switching, and other dynamic applications.

The device also boasts a low collector-emitter saturation voltage (VCE(sat)), which reduces power loss during switching and contributes to the overall efficiency of the system it is a part of. This characteristic, combined with the transistor's fast switching speeds, ensures that the 2N6287 is highly effective in inverter circuits, DC-DC converters, and motor control applications.

Overall, the 2N6287 from STMicroelectronics is a reliable and efficient solution for designers and engineers looking to implement a high-power transistor in their circuits. Its robust build, thermal efficiency, and electrical characteristics make it a versatile component suitable for a broad range of power applications.

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