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Manufacturer STMicroelectronics
Win Source Part Number 266018-P36NE06FP
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian P36NE06FP CAD Model

Description

The STMicroelectronics P36NE06FP is a robust and high-performance MOSFET designed for a wide range of applications. This power MOSFET is a part of STMicroelectronics' STripFET™ series, known for their low on-resistance and low gate charge, which make them highly efficient and reliable components in power management circuits.

Key Features

  • Low On-Resistance: The P36NE06FP boasts a low on-resistance, which translates to reduced conduction losses and improved efficiency in electronic circuits.
  • High Current Capability: With the ability to handle high currents, this MOSFET is suitable for demanding applications that require robust power handling.
  • Enhanced Durability: Built to last, the P36NE06FP features a rugged design that can withstand the rigors of industrial environments.
  • Low Gate Charge: The device's low gate charge ensures fast switching performance, which is critical for applications such as DC-DC converters and motor control.
  • 100% Avalanche Tested: Each unit is thoroughly tested for avalanche performance, ensuring reliability under extreme conditions.

Applications

The versatile nature of the P36NE06FP makes it suitable for a variety of applications, including:

  • Switching applications
  • Power supplies
  • Motor control systems
  • Automotive applications
  • DC-DC converters

Technical Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 60V Continuous Drain Current (I<sub>D) 30A Power Dissipation (P<sub>D) 80W Operating Temperature Range -55°C to 175°C

Quality and Environmental Compliance

The P36NE06FP is compliant with various environmental standards, ensuring that it meets the latest requirements for electronic components in terms of environmental sustainability and safety.

In conclusion, the STMicroelectronics P36NE06FP is a powerful and reliable MOSFET that offers exceptional performance for a wide range of power applications. Its superior electrical characteristics and robust design make it a top choice for engineers and designers looking for a high-quality power transistor.

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