The STB36N60M6 is a state-of-the-art N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This power MOSFET is part of STMicroelectronics' MDmesh™ M6 series, which is renowned for its high energy efficiency and performance in a wide range of applications.

Key Features

• Advanced Technology: Utilizes STMicroelectronics' innovative MDmesh™ M6 technology, which combines the benefits of reduced on-resistance, low gate charge, and excellent switching performance.
• High Voltage Capability: With a drain-source voltage (V_DS) of 600V, this MOSFET can handle high voltage applications with ease, making it ideal for high-efficiency solutions.
• Low On-Resistance: Features an extremely low on-resistance (R_DS(on)) of 0.165 Ω, which translates to reduced conduction losses and improved overall efficiency.
• Enhanced Power Handling: The STB36N60M6 is capable of sustaining a continuous drain current (I_D) of 20A, ensuring reliable performance in high-power applications.
• Improved Switching Performance: Fast switching speeds and low gate charge (Q_g) minimize energy losses during the switching process, contributing to the overall efficiency of the device.
• Robust Package Design: Comes in a TO-220 package, which is widely used for its thermal and mechanical robustness, ensuring reliability even in harsh conditions.

Applications

The STB36N60M6 is versatile and can be used in a variety of applications. It is particularly well-suited for:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC-DC Converters
• Welding Equipment
• Solar Inverters
• UPS Systems

Environmental and Quality Certifications

STMicroelectronics is committed to environmental sustainability and quality. The STB36N60M6 complies with various international standards, ensuring both reliability and eco-friendliness. The device is RoHS compliant and designed for long-term reliability.