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STB36NM60ND

Part No STB36NM60ND
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 29A D2PAK / N-Channel 600 V 29A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer STMicroelectronics
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80.4 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2785 pF @ 50 V
Power Dissipation (Max) 190W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Surface Mount
Supplier Device Package D2PAK (TO-263)
Case / Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB36
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-13861-6,497-13861-1,497-13861-2
Standard Package 1,000
Win Source Part Number 1325396-STB36NM60ND
Ultra Librarian 3D Model Ultra Librarian STB36NM60ND CAD Model

Description

STB36NM60ND - N-channel MOSFET by STMicroelectronics

The STB36NM60ND is a high-performance N-channel power MOSFET produced by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology and innovative solutions. This MOSFET is part of STMicroelectronics' MDmesh™ II Plus low Qg series, designed to offer superior energy efficiency and power density in a wide range of applications.

The STB36NM60ND boasts a robust and durable design, featuring a breakdown voltage (V<sub>DS) of 600V, which makes it suitable for high-voltage applications. It is capable of handling continuous drain currents (I<sub>D) up to 30A, ensuring reliable performance in demanding environments. With an R<sub>DS(on) value as low as 0.093 Ω, this MOSFET minimizes on-state resistance, thereby reducing power losses and improving overall efficiency.

One of the key attributes of the STB36NM60ND is its low gate charge (Qg), which enhances the switching performance, making it ideal for high-frequency applications such as switch-mode power supplies, LED lighting, DC-AC inverters, and motor control systems. The device's fast recovery diode further contributes to its efficiency, especially in hard switching conditions.

The STB36NM60ND is encapsulated in a TO-220 package, which is widely recognized for its thermal performance and ease of mounting. This package ensures that the device can dissipate heat effectively, maintaining its stability and extending its operational lifespan even under high thermal conditions.

STMicroelectronics has taken measures to ensure that the STB36NM60ND meets stringent quality and reliability standards. It is compliant with the RoHS directive, making it environmentally friendly by avoiding the use of hazardous substances. Additionally, its 100% avalanche tested feature guarantees safe operation during extreme conditions.

In summary, the STB36NM60ND from STMicroelectronics is a high-voltage, low-resistance MOSFET that provides energy-efficient and reliable performance for a broad spectrum of power applications. Its advanced features and robust packaging make it a go-to choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.0347 $54.3123
21+ $4.9515 $103.9815
32+ $4.7968 $153.4976
44+ $4.6420 $204.2480
56+ $4.4873 $251.2888
75+ $4.0231 $301.7325
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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