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STB4N62K3

Part No STB4N62K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 620V 3.8A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 620V
Continuous Drain Current at 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 450pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 1.95 Ohm @ 1.9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1102799-STB4N62K3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STB4N62K3 CAD Model

Description

Introducing the STB4N62K3 N-Channel MOSFET by STMicroelectronics

The STB4N62K3 is a state-of-the-art N-channel MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This robust power MOSFET is designed to deliver high efficiency and reliability for a wide range of applications, including switch-mode power supplies, motor control, and automotive systems.

Key Features

  • Advanced Technology: The STB4N62K3 utilizes STMicroelectronics' innovative MDmesh™ K3 technology, which combines a vertical structure with a strip layout to offer reduced on-resistance and lower gate charge, enhancing overall performance.
  • High Voltage Capability: With a drain-source voltage of 620V, this MOSFET is capable of handling high voltage applications, ensuring safe operation under strenuous conditions.
  • Low On-Resistance: The low on-resistance (R<sub>DS(on)) of this device minimizes conduction losses, leading to improved power efficiency and thermal performance.
  • High Current Rating: The STB4N62K3 supports a continuous drain current of up to 3A, making it suitable for high current applications.

Applications

The versatility of the STB4N62K3 MOSFET makes it ideal for various applications, including:

  • LED Lighting
  • Power Supply Units (PSUs)
  • DC-DC Converters
  • Motor Drives
  • Automotive Electronics
  • Energy Management Systems

Package and Sustainability

The STB4N62K3 comes in a surface-mount D2PAK package, which not only allows for efficient heat dissipation but also makes it suitable for compact designs. Additionally, STMicroelectronics is committed to environmental sustainability, and this product is designed with eco-friendly materials and complies with the RoHS directive and other environmental standards.

Conclusion

With its combination of high voltage capability, low on-resistance, and high current rating, the STB4N62K3 from STMicroelectronics is an excellent choice for designers looking for a reliable and efficient N-channel MOSFET. Its use of advanced MDmesh™ K3 technology further solidifies its position as a go-to component for power management and conversion in both industrial and automotive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5864 $63.4560
90+ $1.3017 $117.1530
140+ $1.2610 $176.5400
190+ $1.2204 $231.8760
245+ $1.1797 $289.0265
330+ $1.0577 $349.0410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,500 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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