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Same model may have multiple batches, images only for reference.
PXP6R1-30QLJ
Same model may have multiple batches, images only for reference.

PXP6R1-30QLJ

Part No PXP6R1-30QLJ
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description PXP6R1-30QL/SOT8002/MLPAK33 / P-Channel 30 V 13.5A (Ta), 71.1A (Tc) 1.8W (Ta), 50W (Tc) Surface Mount MLPAK33
Datasheet
PXP6R1-30QLJ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Nexperia USA Inc.
Series -
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 13.5A (Ta), 71.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.1mOhm @ 13.4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 116.7 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MLPAK33
Package / Case 8-PowerVDFN
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1356800-PXP6R1-30QLJ
Ultra Librarian 3D Model Ultra Librarian PXP6R1-30QLJ CAD Model

Description

The PXP6R1-30QLJ is a P-channel MOSFET transistor from Nexperia USA Inc.

  • Package: 8-PowerVDFN
  • Mounting Type: Surface Mount
  • Drain to Source Voltage: 30V
  • Continuous Drain Current (25°C): 13.5A
  • Continuous Drain Current (with Thermal Management): 71.1A
  • Maximum On-Resistance: 6.1mOhm @ 13.4A and 10V
  • Gate Charge: 116.7nC @ 10V
  • Input Capacitance: 3800pF @ 15V
  • Power Dissipation (Ambient Temperature): 1.8W
  • Power Dissipation (with Thermal Management): 50W

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122+ $2.0622 $251.5884
163+ $1.8488 $301.3544
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