The STD17N05T4 is a high-performance, N-channel Power MOSFET designed and manufactured by STMicroelectronics. This MOSFET is part of the STripFET™ IV series, which is known for providing excellent on-state resistance and superior switching performance. The device is particularly suitable for a wide range of high-efficiency applications, including but not limited to, power management, switch-mode power supplies, and high-speed switching circuits.
Key Features
- Low Threshold Drive: The device can be driven at low gate voltages, making it compatible with a variety of logic-level devices and ensuring ease of use in various circuit designs.
- High Current Capability: With a continuous drain current (ID) rating of up to 17A, the STD17N05T4 can handle high current applications with ease.
- Low On-Resistance (RDS(on)): The MOSFET boasts an exceptionally low on-state resistance, which minimizes conduction losses and improves overall efficiency.
- 100% Avalanche Tested: Each device is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in applications where the MOSFET is subjected to high energy pulses.
- Enhanced Durability: The MOSFET is encapsulated in a TO-252 (DPAK) package, which offers not only a compact footprint but also enhanced thermal and mechanical durability.
Applications
The STD17N05T4 is versatile and can be used in a variety of applications. Some of the typical applications include:
- DC/DC converters
- Power management for computers and laptops
- Motor drives and controllers
- LED lighting solutions
- Automotive systems and power distribution
Technical Specifications
Parameter
Value
Drain-source Voltage (VDS)
55V
Continuous Drain Current (ID)
17A
Power Dissipation (PD)
45W
On-state Resistance (RDS(on))
Typically 0.05Ω
Operating Temperature Range
-55°C to 175°C
With its robust construction, high efficiency, and reliability, the STD17N05T4 from STMicroelectronics is an excellent choice for designers looking for a high-quality power MOSFET for their demanding applications.
