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STD1NK60-1

Part No STD1NK60-1
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 156pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 8.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 066307-STD1NK60-1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian STD1NK60-1 CAD Model

Description

STD1NK60-1 - N-channel 600 V, 1 Ω, 1 A SuperMESH™ Power MOSFET

The STD1NK60-1 is a high voltage N-channel Power MOSFET device from STMicroelectronics that is part of the SuperMESH™ family, known for its excellent RDS(on) per area, reduced gate charge, and low capacitance. This MOSFET is designed to offer superior performance in terms of efficiency and reliability for a wide range of high-voltage applications.

Key Features

  • High Voltage Capability: With a drain-source voltage of 600V, the STD1NK60-1 is suitable for high voltage switching applications and can handle continuous currents up to 1A.
  • Low On-Resistance: The device offers an extremely low on-resistance of 1 Ω, which enhances its efficiency by minimizing conduction losses.
  • Reduced Gate Charge: A low gate charge ensures that the switching losses are minimized, which is crucial for high-frequency operations.
  • Zener-Protected Gate: The inclusion of a built-in Zener diode protects the gate from electrostatic discharges and voltage spikes, ensuring the longevity and reliability of the MOSFET.

Applications

The STD1NK60-1 is versatile and can be used in a variety of applications. Its robustness makes it ideal for:

  • Switching applications
  • Power supplies
  • Power management solutions
  • Motor control circuits
  • Lighting systems
  • High-efficiency converters

Product Advantages

STMicroelectronics' SuperMESH™ technology combines the advantages of reduced on-resistance and fast switching speed with the ruggedness and reliability that are hallmarks of ST's MOSFET portfolio. The STD1NK60-1 is no exception, offering a compact and energy-efficient solution for designers who are looking to optimize their high-voltage power conversion systems.

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STD1NK60-1 has undergone rigorous testing and quality control measures to ensure that it meets the stringent requirements of the industry. This product is a testament to ST's dedication to providing customers with reliable and long-lasting power semiconductor solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4258 $51.0960
255+ $0.3984 $101.5920
395+ $0.3846 $151.9170
560+ $0.3572 $200.0320
730+ $0.3434 $250.6820
910+ $0.3297 $300.0270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,510 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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