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STD3NK80Z-1

Part No STD3NK80Z-1
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 800V 2.5A IPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 485pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 4.5 Ohm @ 1.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 093144-STD3NK80Z-1
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name STD3NK80
Introduction Date September 01, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian STD3NK80Z-1 CAD Model

Description

STD3NK80Z-1 N-Channel MOSFET by STMicroelectronics

The STD3NK80Z-1 is a robust N-channel MOSFET from STMicroelectronics, designed to deliver high-performance power switching with enhanced energy efficiency. This power MOSFET is a part of the STP3NK80Z series, renowned for their reliability and superior electrical characteristics.

Key Features

  • High Voltage Capability: With a drain-source voltage (VDS) of 800V, the STD3NK80Z-1 is well-suited for high voltage applications, providing a wide safety margin for electrical designs.
  • Low On-Resistance: The device features a low on-state resistance (RDS(on)), minimizing conduction losses and improving overall efficiency in circuits.
  • High Current Capacity: A continuous drain current (ID) rating of 3A ensures that the MOSFET can handle significant power levels, making it ideal for a range of applications.
  • Zener-Protected: The gate-source is protected by an integrated Zener diode, safeguarding the device against electrostatic discharges and voltage spikes.

Applications

The STD3NK80Z-1 is versatile and can be utilized in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting applications
  • High-efficiency DC/DC converters
  • Power management functions
  • Motor control circuits

Package and Quality

Encased in a TO-251 (IPAK) package, the STD3NK80Z-1 offers a compact form factor while maintaining high thermal performance. STMicroelectronics' commitment to quality ensures that each device meets rigorous standards, providing reliability and longevity for your electronic projects.

Environmental Compliance

STMicroelectronics is dedicated to environmental sustainability. The STD3NK80Z-1 complies with RoHS and is free from hazardous substances, making it a responsible choice for eco-friendly designs.

With its robust features and high reliability, the STD3NK80Z-1 N-Channel MOSFET is an excellent choice for designers seeking to optimize their power management solutions with a component from a trusted industry leader.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,600 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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