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STD5N95K3

Part No STD5N95K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 950V 4A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 950V 4A DPAK
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 950V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 460pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 3.5 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102902-STD5N95K3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STD5N95K3
Introduction Date May 12, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian STD5N95K3 CAD Model

Description

Introducing the STD5N95K3 Power MOSFET from STMicroelectronics

The STD5N95K3 is a state-of-the-art power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This high-performance component is part of the MDmesh™ K3 series, which is known for its exceptional efficiency and thermal performance, making it an ideal choice for a wide range of power applications.

The STD5N95K3 MOSFET utilizes STMicroelectronics' innovative MDmesh™ technology, which combines a vertical structure with a strip layout to offer reduced on-resistance (RDS(on)) and minimized gate charge (Qg). These features lead to improved power efficiency and switching performance, particularly in high-frequency applications. The device offers a drain-source voltage (VDS) of 950V, which provides a generous safety margin for applications involving high voltage operations.

With a continuous drain current (ID) of up to 4.4 A at 25°C, this power MOSFET is capable of handling significant power without compromising on performance. The STD5N95K3 is also characterized by its low gate threshold voltage (VGS(th)), which ensures that the device can be easily driven at lower voltages, increasing its versatility across various circuit designs.

One of the notable features of this MOSFET is its enhanced dv/dt capability, which ensures reliability under harsh switching conditions and reduces the likelihood of unintended turn-on phenomena. This makes the STD5N95K3 particularly suitable for applications such as switch-mode power supplies, LED lighting, solar inverters, and industrial systems where robustness and reliability are of paramount importance.

The STD5N95K3 comes in a surface-mount DPAK package, which not only saves precious board space but also facilitates better thermal management. This compact form factor, combined with the MOSFET's low on-resistance and high efficiency, makes it an attractive solution for designers looking to optimize their power circuits without compromising on size or thermal performance.

In summary, the STD5N95K3 from STMicroelectronics is a high-voltage, high-efficiency power MOSFET that offers designers a blend of performance, reliability, and compactness, making it a top choice for today's demanding power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0480 $51.2000
60+ $1.6804 $100.8240
93+ $1.6279 $151.3947
127+ $1.5754 $200.0758
165+ $1.5229 $251.2785
220+ $1.3653 $300.3660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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