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STD5NM60T4

Part No STD5NM60T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 5A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 96W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031153-STD5NM60T4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name STD5NM60
Introduction Date April 14, 2004
ECCN EAR99
Country of Origin China
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian STD5NM60T4 CAD Model

Description

The STD5NM60T4 is a state-of-the-art N-channel Power MOSFET produced by STMicroelectronics, which is a global leader in semiconductor solutions. This device is part of ST's MDmesh™ V series of power MOSFETs that feature low on-resistance and low gate charge. The STD5NM60T4 is designed to deliver high efficiency and reliability for a wide range of applications, including switch-mode power supplies, lighting, DC-AC converters, and motor control.

Key Features

  • Low threshold drive: The device can be driven at lower gate voltages, enabling efficient operation at lower power levels.
  • High dv/dt capability: This feature makes the STD5NM60T4 suitable for fast-switching applications and ensures robustness against rapid voltage changes.
  • 100% avalanche tested: Each unit is rigorously tested to guarantee performance under extreme conditions, ensuring high reliability and longevity.
  • Improved die-to-footprint ratio: The design maximizes the active area of the silicon die within its footprint, leading to better current handling and thermal performance.
  • Zener-protected: The built-in Zener diode provides protection against overvoltage, enhancing the overall durability of the MOSFET.

Electrical Characteristics

  • Voltage: The breakdown voltage is 600V, which allows for safe operation in high-voltage environments.
  • Current: It features a continuous drain current of 4.4A, ensuring adequate current flow for a variety of electronic circuits.
  • RDS(on): The on-state resistance is low, at 1.2 ohms, which minimizes power loss and improves efficiency.

Applications

The STD5NM60T4 is versatile and can be used in numerous applications. Its robustness and efficiency make it particularly suitable for:

  • LED lighting systems
  • High-efficiency switch-mode power supplies (SMPS)
  • Power management solutions
  • DC-DC converters
  • Motor control circuits
  • Automotive applications

With its combination of performance, efficiency, and reliability, the STD5NM60T4 from STMicroelectronics is an excellent choice for designers looking to optimize their power management and conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8150 $52.9750
150+ $0.6687 $100.3050
235+ $0.6478 $152.2330
320+ $0.6269 $200.6080
415+ $0.6060 $251.4900
555+ $0.5433 $301.5315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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