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STD60N3LH5

Part No STD60N3LH5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 48A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 8.8nC @ 5V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 24A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031154-STD60N3LH5
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STD60N3LH5 CAD Model

Description

Overview of STD60N3LH5 MOSFET by STMicroelectronics

The STD60N3LH5 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor technology. This device is designed to deliver optimal efficiency and power density in various applications, including switch mode power supplies, motor control, and automotive systems. Its robust construction ensures reliability and longevity, making it a preferred choice for engineers and designers looking for a high-quality power management solution.

Key Features

  • Low On-Resistance: The STD60N3LH5 boasts an exceptionally low on-resistance (RDS(on)) of only 0.036 Ohms at VGS = 10 V, which enhances its efficiency by minimizing conduction losses.
  • High Current Capability: With a continuous drain current (ID) rating of up to 60 A, this MOSFET can handle high current applications with ease, making it suitable for demanding power conversion tasks.
  • 100% Avalanche Tested: The device is guaranteed to withstand rugged operating conditions, as it has been thoroughly tested for avalanche performance, ensuring reliability under stress.
  • Low Gate Charge: A low gate charge (Qg) helps reduce switching losses, contributing to the overall energy efficiency of the systems in which it is deployed.
  • Enhanced Body Diode: The MOSFET features an improved body diode with low reverse recovery time (trr) and low reverse recovery charge (Qrr), which is beneficial in fast-switching applications.

Applications

  • Switch Mode Power Supplies (SMPS)
  • DC/DC and AC/DC Converters
  • Motor Control Circuits
  • Automotive and Battery-Powered Systems
  • Power Management Functions

The STD60N3LH5 from STMicroelectronics is encapsulated in a DPAK package, which not only allows for efficient heat dissipation but also makes it easy to mount on a printed circuit board. Its performance characteristics, combined with the package design, ensure that the MOSFET can be used in compact and thermally challenging environments without compromising on performance.

With its robust design and advanced technology, the STD60N3LH5 is an excellent choice for designers who need a reliable and efficient power MOSFET for their high-performance applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3199 $59.1815
445+ $0.2622 $116.6790
685+ $0.2541 $174.0585
940+ $0.2460 $231.2400
1,215+ $0.2379 $289.0485
1,625+ $0.2137 $347.2625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,300 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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