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Same model may have multiple batches, images only for reference.
IXFK80N60P3 Real Image
Same model may have multiple batches, images only for reference.

IXFK80N60P3

Part No IXFK80N60P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 80A TO264AA / N-Channel 600 V 80A (Tc) 1300W (Tc) Through Hole TO-264AA (IXFK)
Datasheet
IXFK80N60P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 13100 pF @ 25 V
Power Dissipation (Max) 1300W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-264AA (IXFK)
Case / Package TO-264-3, TO-264AA
Base Product Number IXFK80
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 1324578-IXFK80N60P3
Ultra Librarian 3D Model Ultra Librarian IXFK80N60P3 CAD Model

Description

The IXYS IXFK80N60P3 is a N-channel MOSFET designed for use in a wide range of applications.

  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 80A (Tc)
  • Maximum Rds On: 70mOhm @ 500mA, 10V
  • Gate Charge (Qg): 190 nC @ 10 V
  • Package: TO-264AA (IXFK)
  • Mounting: Through Hole
  • ECCN: EAR99
  • ROHS3 Compliant: Yes
  • HTSUS code: 8541.29.0095

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24+ $14.8496 $356.3904
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