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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 650mOhm at 3.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 560pF at 50V
Power Dissipation (Maximum) 70W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package DPAK
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260906-STD8NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD8NM60N CAD Model

Description

STD8NM60N - STMicroelectronics N-channel MOSFET

The STD8NM60N is a robust N-channel, Power MOSFET from STMicroelectronics, designed to deliver high efficiency and power density in a variety of applications. This Power MOSFET is part of STMicroelectronics' MDmesh™ II series, which is renowned for its low on-resistance and reduced gate charge, making it a perfect choice for high-performance switching applications.

Key Features

  • High Voltage Capability: The STD8NM60N boasts a high drain-source voltage (V<sub>DS) of 600V, which makes it suitable for handling high voltage operations commonly found in industrial, lighting, and power supply designs.
  • Low On-Resistance: With a low on-state resistance (R<sub>DS(on)), this MOSFET ensures minimal power loss during operation, enhancing the overall efficiency of the system it is integrated into.
  • Reduced Gate Charge (Q<sub>g): A lower gate charge translates to faster switching speeds and reduced switching losses, which is critical for high-frequency applications.
  • Zener-Protected: The built-in gate-source Zener diodes provide protection against gate-oxide stress and ensure a higher reliability in rugged environments.
  • 100% Avalanche Tested: Guaranteeing a high level of ruggedness, each device is tested to ensure it can handle current spikes and stressful conditions.

Applications

The STD8NM60N is versatile and can be used in a wide array of applications. Some of the typical applications include:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC-DC Converters
  • Motion Control
  • Power Factor Correction Circuits

Product Summary

The STD8NM60N from STMicroelectronics is an N-channel MOSFET that combines high voltage capability, low on-resistance, and fast switching performance to meet the rigorous demands of modern power electronics. The device's robustness and reliability are enhanced by features such as Zener-protection and 100% avalanche testing, making it an ideal choice for designers looking to improve system performance while maintaining a high level of durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3622 $65.1960
435+ $0.2976 $129.4560
675+ $0.2885 $194.7375
930+ $0.2794 $259.8420
1,200+ $0.2704 $324.4800
1,605+ $0.2419 $388.2495
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 9,870 pieces
MOQ: 180 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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