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STF12N60M2

Part No STF12N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 9A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 538pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 137249-STF12N60M2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STF12N60M2 CAD Model

Description

STF12N60M2 - N-channel MOSFET from STMicroelectronics

The STF12N60M2 is a high-performance N-channel Power MOSFET produced by the renowned semiconductor manufacturer, STMicroelectronics. This device is part of STMicroelectronics' MDmesh™ M2 series, which is well-known for its excellent efficiency, especially in light-load conditions. The STF12N60M2 is designed to address a broad range of applications, including switch-mode power supplies (SMPS), LED lighting, DC-AC inverters for solar energy systems, and general-purpose power switching applications.

With a drain-source voltage (V<sub>DS) of 600V, the STF12N60M2 can handle high voltage operations, making it suitable for systems that require robust power handling capabilities. The device features a low on-resistance (R<sub>DS(on)) of just 0.52Ω, which ensures minimal conduction losses and improves overall system efficiency. The maximum continuous drain current (I<sub>D) is rated at 11A, allowing for significant power delivery and load management.

The STF12N60M2 incorporates STMicroelectronics' second generation of MDmesh technology, which combines a vertical structure with a proprietary strip layout to achieve extremely low on-resistance and high dv/dt capability. This translates to reduced switching losses and better EMI performance, making the MOSFET ideal for high-frequency switching applications.

The MOSFET comes in a TO-220FP package, which is well-suited for through-hole mounting and offers good thermal performance. This package ensures that the STF12N60M2 can handle higher temperatures without compromising the integrity of the device, providing a reliable solution for power conversion and management systems.

Additional features of the STF12N60M2 include a fast recovery diode, which is integral for high-efficiency converters, and a 100% avalanche tested design, which guarantees robustness and reliability under extreme conditions. The device also complies with the RoHS directive, making it an environmentally friendly choice for electronic designs.

In summary, the STF12N60M2 from STMicroelectronics is a powerful and reliable N-channel Power MOSFET that offers low on-resistance, high voltage capability, and excellent efficiency, making it an ideal choice for a wide range of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1956 $59.7800
120+ $0.9811 $117.7320
185+ $0.9503 $175.8055
255+ $0.9198 $234.5490
325+ $0.8890 $288.9250
435+ $0.7971 $346.7385
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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