Microchip Technology 2N3501UB - High-Performance Transistor

The 2N3501UB, manufactured by Microchip Technology, is a high-quality, military-grade bipolar junction transistor (BJT) designed for a wide range of applications. This device is part of Microchip's extensive portfolio of semiconductor products known for their reliability and performance.

Key Features:

• High Current Gain Bandwidth Product: The 2N3501UB provides excellent frequency response, making it suitable for high-speed switching applications.
• Low Leakage Current: Engineered for minimal leakage, ensuring energy efficiency and reducing power loss.
• Hermetically Sealed: The transistor is encapsulated in a hermetically sealed package, offering protection against harsh environments and ensuring long-term reliability.
• Military Specifications: This device meets stringent military specifications, offering robust performance even under extreme conditions.
• Versatile Use: Ideal for a range of applications, including amplification, switching, and regulation in military and aerospace systems.

Product Specifications:

Parameter Value Package Type UB Transistor Polarity NPN Collector-Emitter Voltage (VCEO) 300V Collector Base Voltage (VCBO) 350V Emitter Base Voltage (VEBO) 7V Collector Current (IC) 500mA Power Dissipation (Pd) 800mW Operating Temperature Range -65°C to +200°C

The 2N3501UB transistor from Microchip Technology is a testament to the company's commitment to providing high-performance components that meet the rigorous demands of military and aerospace applications. With its robust design and superior electrical characteristics, this transistor is a reliable choice for engineers looking to enhance the performance and durability of their electronic systems.